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| MA4E2513L-1289 SURMOUNTTM Low Barrier Tee "0301" Footprint Silicon Schottky Diodes Features * Extremely Low Parasitic Capitance and Inductance * Extremely Small "0301" (1000 x 300 um) Footprint * Surface Mountable in Microwave Circuits, No Wire* * * bonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300C, 16 hours) Lower Susceptibility to ESD Damage M/A-COM Products Rev. V2 Case Style 1289 (Top, Side, & Bottom Views) A B Description and Applications The MA4E2513L-1289 SURMOUNTTM Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300C. The extremely small "0301" outline allows for Surface Mount placement and multi-functional polarity orientations. The MA4E2513L-1289 SURMOUNTTM Diode is recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors, and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding surmount diode, which can be connected to a hard or soft substrate circuit with solder. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop* Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has Visit www.macom.com for additional data sheets and product information. been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MA-COM Technical Solutions and its affiliates reserve the right to make changes to C D E D E D B Cathode 1 Common Anode 2 DIM A B C D E INCHES MIN. 0.038 0.011 0.004 0.007 0.007 MILLIMETERS MIN. 0.975 0.275 0.102 0.175 0.175 MAX. 0.040 0.013 0.008 0.009 0.009 MAX. 1.025 0.325 0.203 0.225 0.225 MA4E2513L-1289 SURMOUNTTM Low Barrier Tee "0301" Footprint Silicon Schottky Diodes Electrical Specifications @ 25C (per junction) 1,2 Model Number Type Recommended Freq. Range Vf @ 1 mA (mV) 330 Max 300 Typ M/A-COM Products Rev. V2 Vb @ 10 uA (V) 3 Min 5 Typ Ct @ 0 V (pF) 0.12 Max 0.10 Typ Rt Slope Resistance (Vf1 - Vf2) / (10.5mA - 9.5 mA) () 10 Typ 14 Max MA4E2513L-1289 Low Barrier DC - 18 GHz 1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic resistance. 2. DC parameters noted above are referenced to the contact (mounting) side of the chip. Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. The rugged construction of these Surmount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and mechanical shock are minimized. Die Bonding Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. These devices are well suited for high temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable for usage. Die attach with electrically conductive silver epoxy is not recommended. For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying equal heat to the circuit at both die-mounting pads. The solder joint must not be made one at a time, creating unequal heat flow and thermal stress. Solder reflow should not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after the die attach is completed. Absolute Maximum Ratings 3 Parameter Operating Temperature Storage Temperature Junction Temperature Forward Current Reverse Voltage RF C.W. Incident Power RF & DC Dissipated Power Value -40C to 150C -40C to 150C +175C 20 mA 5V +20 dBm 50 mW 3. Exceeding any of these values may result in permanent damage. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop* Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has Visit www.macom.com for additional data sheets and product information. been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MA-COM Technical Solutions and its affiliates reserve the right to make changes to MA4E2513L-1289 SURMOUNTTM Low Barrier Tee "0301" Footprint Silicon Schottky Diodes MA4E2513L-1289 Low Barrier SPICE PARAMETERS Is (nA) 26 M/A-COM Products Rev. V2 Rs () 12.8 N 1.20 Cj0 (pF) 1.0 E-2 M 0.5 Ik (mA) 14 Cjpar (pF) 9.0 E-2 Vj (V) 8.0 E-2 FC 0.5 BV (V) 5.0 IBV (mA) 1.0 E-2 Typical Performance 0.140 0.120 Total Capacitance (pF) 0.100 0.080 0.060 0.040 0.020 0.000 0 100 200 300 400 500 Frequency (MHz) Circuit Mounting Dimensions (Inches) Ordering Information Part Number MA4E2513L-1289W MA4E2513L-1289 Packaging Wafer on Frame Die in Carrier 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop* Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has Visit www.macom.com for additional data sheets and product information. been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MA-COM Technical Solutions and its affiliates reserve the right to make changes to |
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